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AON7407

20V P-Channel MOSFET

Alpha and Omega Semiconductor 

www.DataSheet.co.kr

AON7407

20V P-Channel MOSFET

General Description

Product Summary

The AON7407 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

VDS

ID (at VGS=-4.5V)

RDS(ON) (at VGS =-4.5V)

RDS(ON) (at VGS =-2.5V)

RDS(ON) (at VGS =-1.8V)

100% UIS Tested

100% Rg Tested

-20V

-40A

< 9.5mΩ

< 12.5mΩ

< 18mΩ

DFN 3x3_EP

Top View

Bottom View

Pin 1

Top View

1

8

2

7

3

6

4

5

G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current G

TC=25°C

TC=100°C

ID

Pulsed Drain Current C

IDM

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR

EAS, EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum

-20

±8

-40

-29

-100

-14.5

-11.5

-40

80

29

12

3.1

2

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

30

60

Maximum Junction-to-Case

Steady-State

RθJC

3.5

Max

40

75

4.2

D

S

Units

V

V

A

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

Rev 0: June 2011

www.aosmd.com

Page 1 of 6

Datasheet pdf - http://www.DataSheet4U.net/

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