AON7422 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AON7422 Datasheet PDF : 6 Pages
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AON7422
N-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AON7422 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
32A
< 4.6mΩ
< 6mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3
Bottom View
Pin 1
Top View
S
D
S
D
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
32
25
150
15
11
47
110
35
14
1.7
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
30
60
Maximum Junction-to-Case
Steady-State
RθJC
3
Max
40
75
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2009
www.aosmd.com
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