AON2401 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AON2401 Datasheet PDF : 5 Pages
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AON2401
8V P-Channel MOSFET
General Description
Product Summary
The AON2401 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-2.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
RDS(ON) (at VGS =-1.5V)
RDS(ON) (at VGS =-1.2V)
-8V
-8A
< 22mΩ
< 28mΩ
< 36mΩ
< 53mΩ
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-8
±5
-8
-6
-32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
37
66
Max
45
80
D
S
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
Rev 0 : April. 2012
www.aosmd.com
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