AON7423 Ver la hoja de datos (PDF) - Unspecified

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AON7423

20V P-Channel MOSFET

Unspecified 

AON7423

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

TJ=55°C

-1

µA

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±8V

±100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-0.2 -0.5 -0.9 V

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-200

A

VGS=-4.5V, ID=-20A

TJ=125°C

3.95 5

mΩ

5.7 7.2

RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-20A

4.9 6.5 mΩ

VGS=-1.8V, ID=-20A

6.1 8.5 mΩ

VGS=-1.5V, ID=-20A

7.7 11 mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-20A

110

S

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current G

-0.5 -1

V

-50

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

5626

pF

928

pF

716

pF

3

6

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

70 100 nC

Qgs

Gate Source Charge

VGS=-4.5V, VDS=-10V, ID=-20A

9.2

nC

Qgd

Gate Drain Charge

18.4

nC

tD(on)

Turn-On DelayTime

18

ns

tr

Turn-On Rise Time

VGS=-4.5V, VDS=-10V, RL=0.5Ω,

52

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

285

ns

tf

Turn-Off Fall Time

123

ns

trr

Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs

78

ns

Qrr

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs

495

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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