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AON1611

20V P-Channel MOSFET

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AON1611

20V P-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

V

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

TJ=55°C

-1

µA

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±8V

±10 µA

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=-250µA

-0.3 -0.6 -0.9 V

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-16

A

VGS=-4.5V, ID=-4A

TJ=125°C

46

58

mΩ

64.5 80

RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-3A

58

76 mΩ

VGS=-1.8V, ID=-2A

74

98 mΩ

VGS=-1.5V, ID=-1A

88 120 mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-4A

15

S

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

-0.66 -1

V

IS

Maximum Body-Diode Continuous Current

-2.5 A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

550

pF

93

pF

64

pF

12

Ω

SWITCHING PARAMETERS

Qg(4.5V) Total Gate Charge

7

10 nC

Qgs

Gate Source Charge

VGS=-4.5V, VDS=-10V, ID=-4A

1

nC

Qgd

Gate Drain Charge

1.8

nC

tD(on)

Turn-On DelayTime

15

ns

tr

Turn-On Rise Time

VGS=-4.5V, VDS=-10V, RL=2.5Ω,

33

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

50

ns

tf

Turn-Off Fall Time

43

ns

trr

Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs

16

ns

Qrr

Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs

6.5

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

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