AON2407 Ver la hoja de datos (PDF) - Unspecified

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AON2407

30V P-Channel MOSFET

Unspecified 

AON2407

30V P-Channel MOSFET

General Description

The AON2407 combines advanced trench MOSFET technology with a low resistance package to provide

extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.

Features

VDS

ID (at VGS=-10V)

RDS(ON) (at VGS =-10V)

RDS(ON) (at VGS =-4.5V)

RDS(ON) (at VGS =-2.5V)

-30V

-6.3A

< 37.5mΩ

< 46mΩ

< 70mΩ

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current

TA=25°C

TA=70°C

ID

Pulsed Drain Current C

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range

TJ, TSTG

Maximum

-30

±12

-6.3

-5

-34

2.8

1.8

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

37

66

Max

45

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

1/5

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