AOT11N70 Ver la hoja de datos (PDF) - Unspecified

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AOT11N70

700V,11A N-Channel MOSFET

Unspecified 

AOT11N70/AOTF11N70

700V,11A N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=700V, VGS=0V

VDS=560V, TJ=125°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±30V

VGS(th) Gate Threshold Voltage

VDS=5V ID=250µA

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=5.5A

gFS

Forward Transconductance

VDS=40V, ID=5.5A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

ISM

Maximum Body-Diode Pulsed Current

700

800

V

0.8

V/ oC

1

µA

10

±100 nΑ

3

3.8 4.5

V

0.72 0.87 Ω

17

S

0.72 1

V

11

A

43

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1430 1793 2150 pF

116 146 190 pF

8.4 10.5 15 pF

1.8 3.6 5.4

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=560V, ID=11A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=350V, ID=11A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V

30 37.5 45 nC

7.8 10 12 nC

12 15 22 nC

42

ns

74

ns

103

ns

62

ns

320 400 480 ns

7.2

9

11 µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=30mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C

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