AP70T03AH Ver la hoja de datos (PDF) - Advanced Power Electronics Corp

Número de pieza

componentes Descripción

Lista de partido

AP70T03AH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

200

T C =25 o C

150

100

10V

8.0V

6.0V

50

V GS =4.0V

0

0.0

1.5

3.0

4.5

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

60

I D =33A

T C =25 ℃

40

20

0

0

4

8

12

16

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

1000

100

Tj=175 o C

10

Tj=25 o C

1

0.1

0

0.5

1

1.5

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

120

T C =175 o C

90

AP70T03AH/J

10V

8.0V

6.0V

60

30

V GS =4.0V

0

0.0

1.5

3.0

4.5

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2

I D =33A

V GS =10V

1.6

1.2

0.8

0.4

-50

25

100

175

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.5

2

1.5

1

0.5

-50

25

100

175

T j , Junction Temperature ( o C )

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Share Link: