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RFP2N12L Datasheet PDF : 5 Pages
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RFP2N12L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP2N12L
120
120
±10
2
5
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
ID = 250µA, VGS = 0
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
VGS = ±10V, VDS = 0V
ID = 2A, VGS = 5V
ID = 2A, VGS = 5V (Figure 6, 7)
ID ≈ 2A, VDD = 75V, RG = 6.25Ω,
RL = 75Ω, VGS = 5V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 2A
Diode Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
TYP
MAX
UNITS
120
-
-
V
1
-
2
V
-
-
1
µA
-
-
25
µA
-
-
±100
nA
-
-
3.5
V
-
-
1.750
Ω
-
10
25
ns
-
10
45
ns
-
24
45
ns
-
20
25
ns
-
-
200
pF
-
-
80
pF
-
-
35
pF
-
-
5
oC/W
MIN
TYP
MAX
UNITS
-
-
1.4
V
-
150
-
ns
6-253
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