AS6C1008 Ver la hoja de datos (PDF) - Alliance Semiconductor
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AS6C1008 Datasheet PDF : 14 Pages
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February 2007
®
128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
VTERM
-0.5 to 7.0
V
0 to 70(C grade)
Operating Temperature
TA
ºC
-40 to 85(I grade)
Storage Temperature
T STG
-65 to 150
ºC
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
TSOLDER
260
ºC
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
H
Standby
X
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB1
ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
SYMBOL
VCC
VIH*1
VIL*2
TEST CONDITION
MIN.
2.7
0.7*Vcc
- 0.2
Input Leakage Current
ILI VCC ≧ VIN ≧ VSS
-1
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
-1
Output High Voltage
VOH IOH = -1mA
2.2
Output Low Voltage
VOL IOL = 2mA
-
Cycle time = Min.
Average Operating
Power supply Current
ICC CE# = VIL and CE2 = VIH, - 55
-
II/O = 0mA
Cycle time = 1µs
ICC1
CE#≦0.2V and CE2≧VCC-0.2V,
II/O = 0mA
-
other pins at 0.2V or VCC-0.2V
Standby Power
Supply Current
ISB1
CE# ≧VCC-0.2V
or CE2≦0.2V
C*
I*
-
-
*C=Commercial temperature/I= Industrial temperature
TYP. *4
3.0
-
-
-
-
2.7
-
MAX.
5.5
VCC+0.3
0.6
1
1
-
0.4
10
60
1
10
1
20
1
50
UNIT
V
V
V
µA
µA
V
V
mA
mA
µA
µA
02/February/07, v 1.0
Alliance Memory Inc.
Page 3 of 14
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