ATF-33143 Ver la hoja de datos (PDF) - Avago Technologies

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ATF-33143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Avago Technologies 

ATF-33143 DC Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device

Symbol

Parameters and Test Conditions

Idss [1]

VP [1]

Saturated Drain Current

Pinchoff Voltage

VDS = 1.5 V, VGS = 0 V

VDS = 1.5 V, IDS = 10% of Idss

Id

Quiescent Bias Current

gm[1]

Transconductance

VGS = -0.5 V, VDS = 4 V

VDS = 1.5 V, gm = Idss /VP

IGDO

Gate to Drain Leakage Current

VGD = 5 V

Igss

Gate Leakage Current

VGD = VGS = -4 V

NF

Noise Figure

f = 2 GHz

f = 900 MHz

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

Ga

Associated Gain[3]

f = 2 GHz

f = 900 MHz

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

OIP3

Output 3rd Order

Intercept Point[3]

f = 2 GHz

5 dBm Pout/Tone

f = 900 MHz

5 dBm Pout/Tone

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

f = 2 GHz

VDS = 4 V, IDS = 80 mA

P1dB

1 dB Compressed

Compressed Power[3]

f = 900 MHz

VDS = 4 V, IDS = 60 mA

VDS = 4 V, IDS = 80 mA

VDS = 4 V, IDS = 60 mA

Notes:

1. Guaranteed at wafer probe level.

2. Typical value determined from a sample size of 450 parts from 9 wafers.

3. Measurements obtained using production test board described in Figure 5.

Units Min.

mA 175

V -0.65

mA —

mmho 360

μA

μA —

dB

dB

dB 13.5

dB

dBm 30

dBm

dBm

dBm

Typ.[2]

237

- 0.5

80

440

42

0.5

0.5

0.4

0.4

15

15

21

21

33.5

32

32.5

31

22

21

21

20

Max.

305

-0.35

—

—

1000

600

0.8

16.5

Input

50 Ohm

Input

Transmission

Matching Circuit

Line Including

G_mag = 0.20

DUT

Gate Bias T

G_ang = 124

(0.5 dB loss)

(0.3 dB loss)

50 Ohm

Transmission

Line Including

Drain Bias T

(0.5 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a

trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from

actual measurements.

3

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