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AV3904

TO-92 Plastic-Encapsulate Transistors

Avic Technology 

@vic

AV3904

TO-92 Plastic-Encapsulate Transistors

AV3904 TRANSISTOR（ NPN ）

FEATURES

Power dissipation

PCM : 0.625 W（Tamb=25℃）

Collector current

ICM : 0.2 A

Collector-base voltage

V(BR)CBO : 60 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

TO—92

1. EMITTER

2. BASE

3. COLLECTOR

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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

V(BR)CBO Ic= 100 μA ， IE=0

60

V

Collector-emitter breakdown voltage V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Collector cut-off current

ICEo

Emitter cut-off current

IEBO

DC current gain

HFE（1）

HFE（2）

IC= 1 mA , IB=0

IE= 100 μA， IC=0

VCB= 60 V , IE=0

VCB= 40 V , IB=0

VEB= 5 V , IC=0

VCE= 1 V , IC= 10 mA

VCE= 1 V , IC=50 mA

40

V

6

V

0.1 μA

0.1 μA

0.1 μA

100

300

60

Collector-emitter saturation voltage VCE(sat)

IC= 50 mA, IB= 5mA

0.4 V

Base-emitter saturation voltage

VBE(sat)

IC= 50mA, IB= 5 mA

0.95 V

Transition frequency

VCE= 20 V, IC= 10 mA

fT

250

f =100 MHz

MHz

CLASSIFICATION OF HFE(1)

Rank

Range

O

100-200

Y

200-300

G

300-400

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1

Website: http://www.avictek.com

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