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AV3906

TO-92 Plastic-Encapsulate Transistors

Avic Technology 

@vic

AV3906

TO-92 Plastic-Encapsulate Transistors

AV3906 TRANSISTOR（ PNP ）

FEATURES

Power dissipation

PCM : 0.625 W（Tamb=25℃）

Collector current

ICM : -0.2 A

Collector-base voltage

V(BR)CBO : -40 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

TO—92

1. EMITTER

2. BASE

3. COLLECTOR

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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

V(BR)CBO Ic= -100 μA ， IE=0

-40

V

Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0

-40

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 μA， IC=0

-5

Collector cut-off current

ICBO

VCB= -40 V , IE=0

Collector cut-off current

ICEo

VCB= -40 V , IB=0

Emitter cut-off current

IEBO

VEB= -5 V , IC=0

DC current gain

HFE（1）

HFE（2）

VCE= -1 V , IC= -10 mA 100

VCE= -1 V , IC=-50 mA

60

V

V

-0.1 μA

-0.1 μA

-0.1 μA

300

Collector-emitter saturation voltage VCE(sat)

IC= -50 mA, IB= -5mA

-0.4 V

Base-emitter saturation voltage

VBE(sat)

IC= -50mA, IB= -5 mA

-0.95 V

Transition frequency

VCE= -20 V, IC= -10 mA

fT

250

f =100 MHz

MHz

CLASSIFICATION OF HFE(1)

Rank

Range

O

100-200

Y

200-300

G

300-400

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1

Website: http://www.avictek.com

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