VNS1NV04D Ver la hoja de datos (PDF) - STMicroelectronics
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VNS1NV04D Datasheet PDF : 14 Pages
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VNS1NV04D
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDD=13V; ID=0.5A
VDS=13V; f=1MHz; VIN=0V
Min Typ Max
2
90
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(dI/dt)on
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Qi
Total Input Charge
Test Conditions
VDD=15V; ID=0.5A
Vgen=5V; Rgen=RIN MINn=330Ω
(see figure 1)
VDD=15V; ID=0.5A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MINn=330Ω
VDD=12V; ID=0.5A; VIN=5V
Igen =2.13mA (see figure 5)
Min Typ Max
70
200
170 500
350 1000
200 600
0.25 1.0
1.3
4.0
1.8
5.5
1.2
4.0
5.0
5.0
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD=0.5A; VIN=0V
ISD=0.5A; dI/dt=6A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
Min Typ Max
0.8
205
100
0.75
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=5V; VDS=13V
VIN=5V; VDS=13V
Min Typ Max
1.7
3.5
2.0
Overtemperature
Tjsh
Shutdown
150 175 200
Tjrs
Overtemperature Reset
135
Igf
Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10
15
20
Single Pulse
Eas
Avalanche Energy
starting Tj=25°C; VDD=24V
VIN=5V Rgen=RIN MINn=330Ω; L=50mH 55
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Unit
S
pF
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
nC
Unit
V
ns
µC
A
Unit
A
µs
°C
°C
mA
mJ
4/14
2
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