BA979(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Lista de partido
BA979 Datasheet PDF : 5 Pages
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BA979/BA979S
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 20 mA
Reverse current
VR = 30 V
Diode capacitance
f = 100 MHz, VR = 0
Differential forward resistance f = 100 MHz, IF = 1.5 mA
Reverse impedance
f = 100 MHz, VR = 0
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
Part
Symbol
Min
Typ.
Max
Unit
VF
1
V
IR
50
nA
CD
0.5
pF
rf
50
Ω
BA979
zr
5
kΩ
BA979S
zr
9
kΩ
τ
4
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100
10
Tamb = 25°C
1
Scattering Limit
0.1
20
Π - Circuit with 10 dB Attenuation
0
V0 = 40 dBmV
f1 = 100 MHz unmodulated
-20
-40
-60
0.01
0
95 9735
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage ( V )
Fig. 1 Forward Current vs. Forward Voltage
-80
0
20
40
60
80
95 9733 f2 , modulated with 200 kHz, m = 100% (MHz)
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f2
10000
1000
100
f > 20 MHz
Tj = 25 ° C
10
1
0.001 0.01
0.1
1
10
95 9734
IF - Forward Current ( mA )
Fig. 2 Differential Forward Resistance vs. Forward Current
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2
Document Number 85533
Rev. 1.4, 26-Apr-04
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