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BCR08AS Datasheet PDF : 5 Pages
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BCR08AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
123
• IT (RMS) ..................................................................... 0.8A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # .............................................. 5mA
• IFGT # ..................................................................... 10mA
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12 (marked “BF”)
600
720
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
0.8
A
8
A
0.26
A2s
1
W
0.1
W
6
V
1
A
–40 ~ +125
°C
–40 ~ +125
°C
48
mg
Mar. 2002
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