BCR08AS-12A Ver la hoja de datos (PDF) - Renesas Electronics

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BCR08AS-12A

Triac Low Power Use

Renesas Electronics 

BCR08AS-12A

Breakover Voltage vs.

Rate of Rise of Off-State Voltage

160

Typical Example

140

Tj = 125°C

120

I Quadrant

100

80

60

III Quadrant

40

20

0

100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

Rate of Rise of Off-State Voltage (V/µs)

Gate Trigger Current vs.

Gate Current Pulse Width

103

7

Typical Example

5

4

3

2

102

7 IRGT I IRGT III IFGT I

5

4

IFGT III

3

2

101100 2 3 4 5 7 101 2 3 4 5 7 102

Gate Current Pulse Width (µs)

Commutation Characteristics

101

7

Typical Example

5

Tj = 125°C

IT = 1A

3

τ = 500µs

2

VD = 200V

100

7

5

3

Minimum

Characteristics

2 Value

III Quadrant

I Quadrant

10–1

10–1 2 3 5 7 100 2 3 5 7 101

Rate of Decay of On-State

Commutating Current (A/ms)

Gate Trigger Characteristics Test Circuits

6Ω

6Ω

6V

A

6V

A

V

330Ω

V

330Ω

Test Procedure I

6Ω

Test Procedure II

6Ω

6V

A

6V

A

V

330Ω

V

330Ω

Test Procedure III

Test Procedure IV

REJ03G0292-0300 Rev.3.00 Nov 30, 2007

Page 5 of 7

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