BCR16PM-16LH Ver la hoja de datos (PDF) - Renesas Electronics
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BCR16PM-16LH Datasheet PDF : 8 Pages
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BCR16PM-16LH
Latching Current vs.
Junction Temperature
103
Distribution T2+, G–
Typical Example
102
101
TT22+–,,
G+
G–
Typical Example
100
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Main Voltage
Time
(dv/dt)c
Main Current
IT
τ
VD
III Quadrant
(di/dt)c
Time
Minimum
101
Value
(IGTitem1)
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs,
VD = 200V
f = 3Hz
100
100
101
I Quadrant
Minimum
Value
102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0505EJ0100 Rev.1.00
Jul 07, 2011
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
III Quadrant
101
Typical Example
I Quadrant
Tj = 150°C
IT = 4A
τ = 500μs,
VD = 200V
f = 3Hz
100
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
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