BCR2PM-12RE(2014) Ver la hoja de datos (PDF) - Renesas Electronics
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BCR2PM-12RE Datasheet PDF : 7 Pages
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BCR2PM-12RE
Performance Curves
Maximum On-State Characteristics
102
7 Tj = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Gate Characteristics (II and III)
3
2
101
PGM = 1 W
7
5
3
VGM = 6 V
PG(AV)
2
= 0.1 W
100
VGT
7
5
3
2
IGM = 1 A
IRGT I, IRGT III
10–1
7
5
VGD = 0.1 V
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7
Typical Example
5
3
2
102
VRGT I
7
5
3
VRGT III
2
101
–60 –40–20 0 20 40 60 80 100120 140 160
Junction Temperature (°C)
R07DS1239EJ0200 Rev.2.00
Dec 24, 2014
Preliminary
Rated Surge On-State Current
10
9
8
7
6
5
4
3
2
1
0
100
23
5 7 101
23
5 7 102
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
Typical Example
5
3
2
IRGT I, IRGT III
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100120 140160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
Natural Convection
100
No Fins
7
5
Print Board
3
2
( ) t = 1.6 mm
Solder Land : φ2 mm
10–1
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
Conduction Time (Cycles at 60 Hz)
Page 3 of 6
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