BDX65(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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BDX65
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX65 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO(SUS)

Collector-Emitter Breakdown

Voltage (*)

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

ICBO

Collector-Base Cutoff Current

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

VF

Forward Voltage (pulse

method)

VBE

Base-Emitter Voltage (*)

Test Condition(s)

IC=0.1 A

IB=0

L=25mH

VCE=30 V

VCE=40 V

VCE=50 V

VCE=60 V

VBE=5 V

VCBO=60 V

VCBO=40 V

TCASE=200°C

VCBO=50 V

VCBO=80 V

TCASE=200°C

VCBO=100 V

VCBO=60 V

TCASE=200°C

VCBO=120 V

VCBO=70 V

TCASE=200°

IC=5.0 A

IB=20 mA

IF=3 A

IC=5.0 A

VCE=3V

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

Min Typ Max Unit

60 -

80 -

100 -

120 -

-

-

-

-

-

-

-

-

-

-

-

V

-

1 mA

-

- 5.0 mA

-

- 0.4

-

-

3

-

- 0.4

-

-

3

-

-

0.4

-

-

-

3

-

- 0.4

-

-

3

-

-

2

V

- 1.8 -

V

-

- 2.5 V

24/10/2012

COMSET SEMICONDUCTORS

2|4

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