BDY91 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Lista de partido
BDY91 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY91
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff current
VCB=100V; IE=0
VCE=100V;VBE=-1.5V
VCE=100V;VBE=-1.5V;TC=150℃
VEB=6V; IC=0
0.5
V
1.5
V
1.2
V
1.5
V
1.0 mA
1.0
3.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
35
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
120
hFE-3
DC Current Gain
IC= 10A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz
Switching Times
70
MHz
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 0.5A,
VCC=30V
0.35 μs
1.3 μs
0.2 μs
isc Website：www.iscsemi.cn
Share Link: 