BF1205C Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Lista de partido
BF1205C Datasheet PDF : 22 Pages
| |||
Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
8.2 Dynamic characteristics for amplifier b
Table 11: Dynamic characteristics for amplifier b
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA.
Symbol Parameter
Conditions
Min Typ
yfs
Cig1-ss
Cig2-ss
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance Tj = 25 °C
28
input capacitance at gate 1 f = 1 MHz
-
input capacitance at gate 2 f = 1 MHz
-
output capacitance
f = 1 MHz
-
reverse transfer capacitance f = 1 MHz
-
power gain
noise figure
cross-modulation
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1%; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
[1]
31
28
24
-
-
-
[2]
90
33
2.0
3.4
0.85
20
35
32
28
5
1.3
1.4
-
at 10 dB AGC
- 88
at 20 dB AGC
- 94
at 40 dB AGC
100 103
Max Unit
43 mS
2.5 pF
- pF
- pF
- fF
39 dB
36 dB
32 dB
- dB
1.9 dB
2.1 dB
- dBµV
- dBµV
- dBµV
- dBµV
[1] For the MOS-FET not in use: VG1-S(a) = 0 V; VDS(a) = 0 V.
[2] Measured in Figure 34 test circuit.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 22
Share Link: 