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BFC46

4TH GENERATION MOSFET

Semelab - > TT Electronics plc  

SEME

LAB

TO247–AD Package Outline.

Dimensions in mm (inches)

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

0.40 (0.016)

0.79 (0.031)

2.21 (0.087)

2.59 (0.102)

3.55 (0.140)

3.81 (0.150)

123

1.65 (0.065)

2.13 (0.084)

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

5.25 (0.215)

BSC

BFC46

4TH GENERATION MOSFET

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

VDSS

ID(cont)

RDS(on)

800V

5.5A

2.50Ω

Terminal 1 Gate

Terminal 3 Source

Terminal 2 Drain

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

Drain – Source Voltage

ID

Continuous Drain Current

IDM

Pulsed Drain Current 1

VGS

Gate – Source Voltage

PD

TJ , TSTG

Total Power Dissipation @ Tcase = 25°C

Operating and Storage Junction Temperature Range

TL

Lead Temperature : 0.063” from Case for 10 Sec.

800

V

5.5

A

22

A

±30

V

180

W

–55 to 150

°C

300

STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)

BVDSS

Characteristic

Drain – Source Breakdown Voltage

Test Conditions

VGS = 0V , ID = 250µA

IDSS

IGSS

VGS(TH)

Zero Gate Voltage Drain Current

(VGS = 0V)

Gate – Source Leakage Current

Gate Threshold Voltage

VDS = VDSS

VDS = 0.8VDSS , TC = 125°C

VGS = ±30V , VDS = 0V

VDS = VGS , ID = 1.0mA

ID(ON)

RDS(ON)

On State Drain Current 2

Drain – Source On State Resistance 2

VDS > ID(ON) x RDS(ON) Max

VGS = 10V

VGS = 10V , ID = 0.5 ID [Cont.]

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%

Min.

800

2

5.5

Typ. Max. Unit

V

250

µA

1000

±100 nA

4V

A

2.50 Ω

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 4/94

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