BGA430 Ver la hoja de datos (PDF) - Infineon Technologies

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BGA430

Broad Band High Gain LNA

Infineon Technologies 

Preliminary

Broad Band High Gain LNA

BGA430

Features

• High gain |S21|2:

32 dB at 0.9 GHz,

28 dB at 2.15 GHz

• Low noise figure F50Ω: 2.2 dB at 0.9 GHz,

2.4 dB at 2.15 GHz

• Matched to 50Ω

• Reverse isolation > 40dB

• Small SOT363 package

• Typical supply voltage: 5V

• SIEGET®-25 technology

4

5

6

3

2

1

VPS05604

Applications

• LNB IF amplifiers

• CATV systems

• Set Top Boxes

• Buffer amplifiers for wide band applications

Description

4

3

The BGA430 is a broad band high gain

GND2

RFout

amplifier based upon Infineon Technologies’

Silicon Bipolar Technology B6HF. Housed

in a small SOT363 package this Silicon

5

2

Monolithic Microwave Integrated Circuit

GND1

GND1

(MMIC) requires very few external

components due to the integrated biasing

concept.

6

RFin

Bias

1

Vcc

Due to the advanced B6HF process the

BGA430 achieves an exceptional low noise

figure of 2.4 dB and a high gain of 28 dB at

2.15 GHz.

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BGA430

Package

SOT363

Marking

PHs

Chip

T0509

Preliminary data sheet

4

2002-05-03

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