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BPW24

Silicon PIN Photodiode, RoHS Compliant

Vishay Semiconductors 

Silicon PIN Photodiode, RoHS Compliant

BPW24R

Vishay Semiconductors

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

Breakdown voltage

Reverse dark current

Diode capacitance

Open circuit voltage

Temperature coefficient of Vo

Short circuit current

Temperature coefficient of Ik

Reverse light current

Absolute Spectral Sensitivity

Angle of half sensitivity

IR = 100 µA, E = 0

VR = 50 V, E = 0

VR = 0 V, f = 1 MHz, E = 0

VR = 5 V, f = 1 MHz, E = 0

VR = 20 V, f = 1 MHz, E = 0

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

EA = 1 klx

Ee = 1 mW/cm2, λ = 950 nm,

VR = 20 V

VR = 5 V, λ = 870 nm

VR = 5 V, λ = 900 nm

Wavelength of peak sensitivity

Range of spectral bandwidth

Rise time

VR = 20 V, RL = 50 Ω, λ = 820 nm

Fall time

VR = 20 V, RL = 50 Ω, λ = 820 nm

Note

Tamb = 25 °C, unless otherwise specified

SYMBOL

V(BR)

Iro

CD

CD

CD

Vo

TKVo

Ik

TKIk

Ira

s(λ)

s(λ)

ϕ

λp

λ0.5

tr

tf

MIN.

60

45

TYP.

200

2

11

3.8

2.5

450

-2

55

0.1

60

0.60

0.55

± 12

900

600 to 1050

7

7

MAX.

10

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

UNIT

V

nA

pF

pF

pF

mV

mV/K

µA

%/K

µA

A/W

A/W

deg

nm

nm

ns

ns

104

VR = 50 V

103

102

101

100

20 40 60 80 100 120

94 8454

Tamb - Ambient Temperature (°C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

1.4

1.2

VR = 5 V

λ = 950 nm

1.0

0.8

0.6

0

94 8409

20

40

60

80 100

Tamb - Ambient Temperature (°C)

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Document Number: 81520

Rev. 1.5, 11-Aug-08

For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com

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