BS107(2000) Ver la hoja de datos (PDF) - ON Semiconductor

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BS107
(Rev.:2000)

Small Signal MOSFET 250 mAmps, 200 Volts

ON Semiconductor 

BS107, BS107A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc)

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2.)

IDSS

–

–

30

nAdc

V(BR)DSX 200

–

–

Vdc

IGSS

–

0.01

10

nAdc

Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)

Static Drain–Source On Resistance

BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)

(VGS = 10 Vdc, ID = 200 mAdc)

BS107A (VGS = 10 Vdc)

(ID = 100 mAdc)

(ID = 250 mAdc)

SMALL–SIGNAL CHARACTERISTICS

VGS(Th)

1.0

–

3.0

Vdc

rDS(on)

–

–

Ohms

–

28

–

14

–

4.5

6.0

–

4.8

6.4

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Forward Transconductance

(VDS = 25 Vdc, ID = 250 mAdc)

SWITCHING CHARACTERISTICS

Ciss

–

60

Crss

–

6.0

Coss

–

30

gfs

200

400

–

pF

–

pF

–

pF

–

mmhos

Turn–On Time

Turn–Off Time

2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

ton

–

6.0

15

ns

toff

–

12

15

ns

RESISTIVE SWITCHING

PULSE GENERATOR

50

+25 V

Vin

40 pF

23

20 dB

50 Ω ATTENUATOR

50 1 M

Figure 1. Switching Test Circuit

TO SAMPLING SCOPE

50 Ω INPUT

ton

Vout

90%

toff

90%

OUTPUT Vout

INVERTED

10 V

INPUT Vin

10%

90%

50%

50%

PULSE WIDTH

10%

Figure 2. Switching Waveforms

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