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BS616LV4025

Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV4025

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage (2)

Guaranteed Input High

Voltage (2)

TEST CONDITIONS

Vcc=5V

Vcc=5V

IIL

Input Leakage Current Vcc = Max, VIN= 0V to Vcc

MIN. TYP.(1) MAX.

UNITS

-0.5

--

0.8

V

2.2

-- Vcc+0.2 V

--

--

1

uA

IOL

Output Leakage Current Vcc=Max, CE1=VIH or CE2=VIL or OE=VIH,

VI/O = 0V to Vcc

--

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=5V

--

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=5V

2.4

--

--

V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax (3)

Vcc=5V

--

--

45

mA

ICCSB

Standby Current- TTL

Vcc = Max, CE1 = VIHor CE2=VIL Vcc=5V

IDQ = 0mA

--

--

2

mA

Vcc = Max, CE1ЊVcc-0.2V or

ICCSB1

Standby Current-CMOS CE2Љ0.2V; VINЊVcc-0.2V or VIN Vcc=5V

--

1.5

15

uA

Љ0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV4025

4

Revision 2.4

April 2002

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