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BS616LV8017DC(2008) Ver la hoja de datos (PDF) - Brilliance Semiconductor

Número de pieza
componentes Descripción
Lista de partido
BS616LV8017DC
(Rev.:2008)
BSI
Brilliance Semiconductor BSI
BS616LV8017DC Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
BS616LV8017
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
tAW
tCW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOHZ
tOW
DESCRIPTION
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
MIN. TYP. MAX.
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN. TYP. MAX.
Write Cycle Time
55
--
--
70
--
--
Address Set up Time
0
--
--
0
--
--
Address Valid to End of Write
55
--
--
70
--
--
Chip Select to End of Write
(CE) 55
--
--
70
--
--
Data Byte Control to End of Write (LB, UB) 25
--
--
30
--
--
Write Pulse Width
Write Recovery Time
30
--
--
35
--
--
(CE, WE) 0
--
--
0
--
--
Write to Output High Z
--
--
25
--
--
30
Data to Write Time Overlap
25
--
--
30
--
--
Data Hold from Write Time
0
--
--
0
--
--
Output Disable to Output in High Z
--
--
25
--
--
30
End of Write to Output Active
5
--
--
5
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
tWR1(3)
OE
tCW(11)
CE
(5)
LB, UB
WE
DOUT
DIN
tAS
tOHZ(4,10)
tBW
tAW
tWP(2)
tWR2(3)
tDH
tDW
R0201-BS616LV8017
7
Revision 2.4
Oct.
2008

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