TGF4230-EEU Ver la hoja de datos (PDF) - TriQuint Semiconductor

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Lista de partido

TGF4230-EEU

Discr 1.2mm ete HFET

TriQuint Semiconductor 

TGF4230-EEU

EXAMPLE OF

DC I-V CURVES

0.3

0.25

0.2

VG = 0.0 to -2.25 V

(0.25 V steps)

TA = 25°C

0.15

0.1

0.05

0

0 1 2 3 4 5 6 7 8 9 10

Drain Voltage (V)

OUTPUT POWER VS.

INPUT POWER

30

F = 8.5GHz

V D =8.0V

28

I Q =50mA*

T A =25°C

26

24

22

20

18

16

4

6

8 10 12 14 16 18 20 22

Input Power (dBm)

Note: IQ is defined as the drain current before application of RF signal at the input.

POWER ADDED

EFFICIENCY VS.

INPUT POWER

60

F = 8.5GHz

55

V D =8.0V

I Q =50mA*

50

T A =25°C

45

40

35

30

25

20

15

10

5

4

6

8 10 12 14 16 18 20 22

Input Power (dBm)

2

TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com

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