TGF4230 Ver la hoja de datos (PDF) - TriQuint Semiconductor
Número de pieza
componentes Descripción
Lista de partido
TGF4230 Datasheet PDF : 7 Pages
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TGF4230-EEU
PREDICTED CHANNEL
TEMPERA TURE VS.
BASE TEMPERA TURE
at 0.51 W and 1.02 W
dissipated power
HFET CHANNEL
TEMPERATURE VS.
MEDIAN LIFE
300
250
200
150
100
50
0
-50
-100
-100
-50
p
0.51 W (soldered to carrier)
0.51 W (HFET backside metal)
1.02 W (soldered to carrier)
1.02 W (HFET backside metal)
0
50
100
150
200
Base Temperature (° C)
Case 1: Base temperature at backside of carrier (with 38 m AuSn solder attach to 0.5 mm CuMo Car rier).
Case 2: Base temperature at backside of 1.2 mm HFET .
p
325
300
275
250
225
200
175
150
125
100
1
2
3
4
5
6
7
8
9 10
11415 years
Median Life (10^X Hours)
4
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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