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IRFF220 Datasheet PDF : 7 Pages
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IRFF220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF220
200
200
3.5
14
±20
20
0.16
85
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
200
-
-
V
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
25
µA
-
250
µA
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 3.5
-
-
A
Gate to Source Leakage Forward
IGSS VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 2.0A (Figures 8, 9)
-
0.5 0.800
Ω
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 2.0A (Figure 12) 1.5 2.25
-
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, RG = 9.1Ω,
VGS = 10V, ID ≈ 3.5A (Figures 17, 18)
RL = 27.4Ω for VDSS = 100V,
RL = 20.3Ω for VDSS = 75V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
20
40
ns
-
30
60
ns
-
50
100
ns
-
30
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT) VGS = 10V, ID = 3.5A, VDS = 0.8 x Rated BVDSS,
-
11
15
nC
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge
Qgs
is Essentially Independent of Operating
Temperature
-
5.0
-
nC
Qgd
-
6.0
-
nC
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
450
-
pF
COSS
-
150
-
pF
CRSS
-
40
-
pF
LD
Measured from the
Modified MOSFET
Drain Lead, 5mm (0.2in) Symbol Showing the
from Header to Center Internal Device
of Die
Inductances
-
5.0
-
nH
LS
Measured from the
Source Lead, 5mm
(0.2in) from Header and
Source Bonding Pad
G
D
LD
LS
-
15
-
nH
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
-
-
6.25 oC/W
-
-
175 oC/W
2
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