3045PT Ver la hoja de datos (PDF) - Fairchild Semiconductor

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3045PT

Schottky Rectifiers

Fairchild Semiconductor 

MBR3035PT - MBR3060PT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

123

TO-3P/TO-247AD

PIN 1

PIN 3

+

CASE

PIN 2

Schottky Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

3035PT 3045PT 3050PT

VRRM

Maximum Repetitive Reverse Voltage

35

45

50

IF(AV)

Average Rectified Forward Current

30

IFSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

200

Tstg

Storage Temperature Range

-65 to +175

TJ

Operating Junction Temperature

-65 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

3060PT

60

Units

V

A

A

°C

°C

Thermal Characteristics

Symbol

PD

RθJL

Parameter

Power Dissipation

Thermal Resistance, Junction to Lead

Value

3.0

1.4

Units

W

°C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

VF

Forward Voltage IF = 20 A, TC = 25°C

IF = 20 A, TC = 125°C

IF = 30 A, TC = 25°C

IF = 30 A, TC = 125°C

IR

Reverse Current @ rated VR TA = 25°C

TA = 125°C

IRRM

Peak Repetitive Reverse Surge Current

2.0 us Pulsu Width, f = 1.0 KHz

Device

3035PT 3045PT

-

0.60

0.76

0.72

3050PT 3060PT

0.75

0.65

-

-

Units

V

V

V

V

1.0

5.0

mA

60

100

mA

1.0

0.5

A

2001 Fairchild Semiconductor Corporation

MBR3035PT - MBR3060PT, Rev. C

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