CEPF634(2002) Ver la hoja de datos (PDF) - Chino-Excel Technology

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CEPF634
(Rev.:2002)

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CEPF634/CEBF634

1.30

1.20

4

1.10

VDS=VGS

ID=250ӴA

1.15

1.10 ID=250ӴA

1.05

1.0

1.00

0.90

0.95

0.80

0.70

0.90

0.60

-50 -25 0 25 50 75 100 125 150

0.85

-50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation

with Temperature

6

VDS=50V

5

4

3

2

1

0

0

2

4

6

8

IDS, Drain-Source Current (A)

Figure 7. Transconductance Variation

with Drain Current

Tj, Junction Temperature ( C)

Figure 6. Breakdown Voltage Variation

with Temperature

20

10 VGS=0V

1

0.1

0.4

0.6

0.8

1.0

1.2

VSD, Body Diode Forward Voltage (V)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

10

VDS=200V

8 ID=5.6A

6

4

2

0

0

7

14

21

28

Qg, Total Gate Charge (nC)

Figure 9. Gate Charge

4-30

100Ӵ

s

101

100

TC=25 C

Tj=150 C

-1 Single Pulse

10

100

101

102

103

VDS, Drain-Source Voltage (V)

Figure 10. Maximum Safe

Operating Area

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