SM5050A
DC Characteristics
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to 80°C unless otherwise noted
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
Q HIGH-level output voltage
VOH
V D D = 2.7V, IO H = 8mA
2.2
–
–
V
Q LOW -level output voltage
VOL
V D D = 2.7V, IO L = 8mA
–
–
0.4
V
Q output leakage current
IZ
Measurement circuit 4,
INHN = VSS
VOH = VDD
VOL = VSS
–
–
–
10
µA
–
10
INHN HIGH-level input voltage
V IH1
0.7VDD
–
–
V
P0, P1 HIGH-level input voltage
V IH2
0.9VDD
–
–
V
INHN LOW -level input voltage
V IL1
–
–
0.3VDD
V
P0, P1 LOW -level input voltage
V IL2
–
–
0.1VDD
V
Current consumption
25MHz crystal, measurement circuit 1,
load circuit 1, INHN = open, CL = 15pF,
–
P0 = HIGH, P1 = LOW , VDD = 3.0V
ID D
25MHz crystal, measurement circuit 1,
load circuit 1, INHN = open, CL = 15pF,
–
P0 = HIGH, P1 = LOW
23
–
mA
–
42
Standby current
INHN, P0, P1 input pull-up
resistance
Negative resistance
Feedback resistance
Internal capacitance
IS T
INHN = VSS, measurement circuit 1
–
–
40
µA
R UP1
0.3
–
6
MΩ
V D D = 3V, measurement circuit 2
R UP2
10
–
200
kΩ
−R L
V D D = 3V, Ta = 25°C , f = 30MHz
–
−2 4 0
–
Ω
Rf
Measurement circuit 3
100
300
900
kΩ
CG
Design values
CD
15.98
18.44
20.90
pF
15.98
18.44
20.90
pF
NIPPON PRECISION CIRCUITS—4