CGA3318ZPCK-410 Ver la hoja de datos (PDF) - RF Micro Devices

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CGA3318ZPCK-410

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

RF Micro Devices 

CGA-3318Z

Pin

1

2, 3

4

5

6, 7

8

EPAD

Function

RF IN

GND

RF IN

RF OUT/VCC

GND

RF OUT/VCC

GND

Description

Device 1. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as

possible.

Device 2. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.

Device 2. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF

choke inductor. Because DC biasing is present on this pin, a DC-blocking capacitor should be used in most appli-

cations. The supply side of the bias network should be well bypassed.

Same as pins 2 and 3.

Device 1. Same as pin 5.

Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum

thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended

land pattern.

Device Pin Out

1

8

2

7

3

6

4

5

Suggested Pad Layout

PCB Pad Layout

Dimensions in inches [millimeters]

Sized for 31 mil thick FR-4

DS120502

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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