CHR2293 Ver la hoja de datos (PDF) - United Monolithic Semiconductors
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CHR2293 Datasheet PDF : 4 Pages
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CHR2293
20-24GHz Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vdm = Vdl = 3.5V, Vgm=-0.9V, Vgb=-0.7V, Vgx=-0.8V, Vga=-0.55V
Symbol
Parameter
FRF
RF frequency range
FLO
LO frequency range
FIF
IF frequency range
Gc
Conversion gain (1)
NF Noise Figure, for IF>0.1GHz (1)
PLO
LO Input power
Img Sup Image Suppression (2)
P1dB Input power at 1dB gain compression
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (3)
Min Typ Max Unit
20
24
GHz
9.25
12.75 GHz
DC
1.5
GHz
+11
dB
4
dB
+10
dBm
13
17
dBc
-8
dBm
2.0:1
2.0:1
130
mA
(1) On Wafer measurements
(2) With external I/ Q combiner
(3) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 80mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. DSCHR22931192 - 11 Jul 11
2/4
Specifications subject to change without notice 2
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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