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CM150RX-12A

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM150RX-12A

HIGH POWER SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

INVERTER PART

Symbol

Parameter

Conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V

5

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

Tj = 25°C

—

Collector-emitter saturation IC = 150A, VGE = 15V

(Note. 6)

VCE(sat) voltage

Tj = 125°C

—

IC = 150A, VGE = 15V

Chip

—

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer capacitance

VCE = 10V

VGE = 0V

—

(Note. 6) —

—

QG

Total gate charge

VCC = 300V, IC = 150A, VGE = 15V

—

td(on)

Turn-on delay time

VCC = 300V, IC = 150A

—

tr

Turn-on rise time

VGE = ±15V, RG = 6.2Ω

—

td(off)

Turn-off delay time

Inductive load

—

tf

Turn-off fall time

—

trr (Note.3) Reverse recovery time

(IE = 150A)

—

Qrr (Note.3) Reverse recovery charge

—

VEC(Note.3) Emitter-collector voltage

IE = 150A, VGE = 0V

Tj = 25°C

(Note. 6)

—

Tj = 125°C

—

IE = 150A, VGE = 0V

Chip

—

Rth(j-c)Q Thermal resistance

per IGBT

—

(Note. 1)

Rth(j-c)R (Junction to case)

per free wheeling diode

—

RGint

Internal gate resistance

TC = 25°C, per switch

—

RG

External gate resistance

4.1

Limits

Typ.

Max. Unit

—

1

mA

6

7

V

—

0.5

μA

1.7

2.1

1.9

—

V

1.6

—

—

18

—

2

nF

—

0.6

300

—

nC

—

120

—

100

—

350

ns

—

600

—

200

5

—

μC

2.0

2.8

1.95

—

V

1.9

—

—

0.24 K/W

—

0.46

0

—

Ω

—

41

BRAKE PART

Symbol

Parameter

Conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V

5

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

VCE(sat)

Collector-emitter saturation

voltage

IC = 75A, VGE = 15V

IC = 75A, VGE = 15V

Tj = 25°C

(Note. 6)

—

Tj = 125°C

—

Chip

—

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer capacitance

VCE = 10V

VGE = 0V

—

(Note. 6) —

—

QG

Total gate charge

VCC = 300V, IC = 75A, VGE = 15V

—

IRRM(Note.3) Repetitive peak reverse current VR = VRRM

—

VFM(Note.3) Forward voltage drop

IF = 75A

Tj = 25°C

—

(Note. 6)

Tj = 125°C

—

IF = 75A

Chip

—

Rth(j-c)Q Thermal resistance

per IGBT

—

Rth(j-c)R

(Note. 1)

(Junction to case)

per Clamp diode

—

RGint

Internal gate resistance

TC = 25°C

—

RG

External gate resistance

8.0

Limits

Typ.

Max. Unit

—

1

mA

6

7

V

—

0.5

μA

1.7

2.1

1.9

—

V

1.6

—

—

9.3

—

1.0

nF

—

0.3

200

—

nC

—

1

mA

2.0

2.8

1.95

—

V

1.9

—

—

0.44 K/W

—

0.85

0

—

Ω

—

83

Jan. 2009

3

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