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CM400DY-34A

IGBT MODULES HIGH POWER SWITCHING USE

Mitsumi 

MITSUBISHI IGBT MODULES

CM400DY-34A

HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC = 107°C*1

Pulse

Operation

Pulse

TC = 25°C*1

Conditions

(Note 2)

(Note 2)

(Note 2)

(Note 2)

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M8 screw

Mounting M6 screw

G(E) terminal M4 screw

Typical value

Ratings

1700

±20

400

800

400

800

3780

–40 ~ +150

–40 ~ +125

3500

8.8 ~ 10.8

3.5 ~ 4.5

1.3 ~ 1.7

1200

Unit

V

V

A

A

W

°C

°C

Vrms

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

Gate-emitter threshold

VGE(th)

voltage

IC = 40mA, VCE = 10V

5.5

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

VCE(sat)

Collector to emitter saturation

voltage

IC = 400A, VGE = 15V

Tj = 25°C

—

Tj = 125°C

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 1000V, IC = 400A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 1000V, IC = 400A

—

td(off)

Turn-off delay time

VGE = ±15V

—

tf

Turn-off fall time

RG = 1.2Ω, Inductive load

—

trr (Note 1) Reverse recovery time

IE = 400A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 400A, VGE = 0V

—

Rth(j-c)Q

Thermal resistance

IGBT part (1/2 module)*1

—

Rth(j-c)R

FWDi part (1/2 module)*1

—

Rth(c-f)

Contact thermal resistance

Case to heat sink, Thermal compound applied (1/2 module)*1,*2

—

RG

External gate resistance

1.2

Limits

Typ.

—

7.0

—

2.2

2.45

—

—

—

2670

—

—

—

—

—

40

—

—

—

0.019

—

*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.

*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Max.

1

8.5

2.0

2.8

—

98.8

11.2

2.12

—

950

300

1000

350

450

—

3.0

0.033

0.055

—

12

Unit

mA

V

µA

V

nF

nC

ns

µC

V

K/W

Ω

Feb. 2009

2

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