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CM75E3U-24F

HIGH POWER SWITCHING USE

Mitsumi 

MITSUBISHI IGBT MODULES

CM75E3U-24F

HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

VRRM

IF

IFM

Tj

Tstg

Viso

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Repetitive peak reverse voltage

Forward current

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

TC = 25°C

Pulse

TC = 25°C

Pulse

TC = 25°C

Clamp diode part

TC = 25°C

Pulse

Conditions

Clamp diode part

Clamp diode part

Charged part to base plate, AC 1 min.

Main Terminal M5

Mounting holes M6

Typical value

(Note 2)

(Note 2)

(Note 2)

Ratings

1200

±20

75

150

75

150

450

1200

75

150

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5

310

Unit

V

V

A

A

A

A

W

V

A

A

°C

°C

V

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V

5

IGES

Gate leakage current

VGE = VCES, VCE = 0V

—

Tj = 25°C

—

VCE(sat) Collector-emitter saturation voltage Tj = 125°C

IC = 75A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 600V, IC = 75A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 75A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 4.2Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 75A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 75A, VGE = 0V

—

RG

External gate resistance

4.2

Rth(j-c)Q Thermal resistance*1

IGBT part

—

Rth(j-c)R

FWDi part

—

Rth(j-c’)Q Thermal resistance

Tc measured point is just under the chips

—

VFM

Forward voltage drop

IF = 75A, Clamp diode part

—

IF = 75A

trr

Reverse recovery time

VCC = 600V, VGE1 = VGE2 = 15V

—

RG = 4.2Ω, Inductive load switching operation,

Qrr

Reverse recovery charge

Clamp diode part

—

Rth(j-c)R Thermal resistance*1

Clamp diode part

—

Rth(c-f)

Contact thermal resistance

Case to fin, Thermal compound applied*2 (1/2 module)

—

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

*1 : Tc measured point is indicated in OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

Limits

Typ.

—

6

—

1.8

1.9

—

—

—

825

—

—

—

—

—

3.1

—

—

—

—

—

—

—

Max. Unit

1

mA

7

20

2.4

—

29

1.3

0.75

—

100

50

400

300

150

—

3.2

42

0.28

0.47

0.22*3

3.2

150

V

µA

V

nF

nF

nF

nC

ns

ns

ns

ns

ns

µC

V

Ω

°C/W

°C/W

°C/W

V

ns

3.1

—

µC

—

0.47 °C/W

0.07

— °C/W

Mar.2002

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