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CPD06

General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip

Central Semiconductor 

PROCESS CPD06

General Purpose Rectifier

3 Amp Glass Passivated Rectifier Chip

PROCESS DETAILS

Process

Die Size

Die Thickness

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

GLASS PASSIVATED MESA

89 x 89 MILS

10.2 MILS

66 x 66 MILS

Ni/Au - 5,000Å/2,000Å

Ni/Au - 5,000Å/2,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

1,490

PRINCIPAL DEVICE TYPES

1N5400 thru 1N5408

1N5550 thru 1N5554

1N5624 thru 1N5627

CMR3-02 Series

BACKSIDE CATHODE

w w w. c e n t r a l s e m i . c o m

R4 (22-March 2010)

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