1000
V GE = 0V,
f = 1MHz
C ies = C ge + C g c , Cc e SH O R TE D
C res = C gc
800
C oes = C ce + C g c
C ies
600
C oe s
400
C re s
200
0
A
1
10
100
VC E, Colle ctor-to-Em itter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
CPV362M4U
20 VCC = 400V
I C = 3.9A
16
12
8
4
0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.20
VCC = 480V
VGE =
TJ =
15V
25 °C
0.19 IC = 3.9A
0.18
0.17
0.16
0.15
0
10
20
30
40
50
RG , Gate Resistance (Oh(mΩ)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1 RG = 50OΩhm
VGE = 15V
VCC = 480V
IC = 7.8A
IC = 3.9A
IC = 1.95A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( C° )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature