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CPV364MM Datasheet PDF : 2 Pages
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CPV364MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.69 — V/°C VGE = 0V, IC = 1.0mA
— 1.7 —
IC = 12A
VGE = 15V
— 2.0 — V IC = 22A
— 1.9 —
IC = 12A, T J = 150°C
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2 12 — S VCE = 100V, I C = 24A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
VFM
Diode Forward Voltage Drop
— — 3500
— 1.3 1.7 V
VGE = 0V, VCE = 600V, T J = 150°C
IC = 15A
— 1.2 1.6
IC = 15A, T J = 150°C
IGES
Gate-to-Emitter Leakage Current
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
— 59 80
IC = 24A
Qge
Gate - Emitter Charge (turn-on)
— 8.6 10 nC VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
— 25 42
td(on)
Turn-On Delay Time
— 26 —
TJ = 25°C
tr
Rise Time
— 37 — ns IC = 24A, VCC = 480V
td(off)
Turn-Off Delay Time
— 240 410
VGE = 15V, R G = 10Ω
tf
Fall Time
— 230 420
Energy losses include "tail" and
Eon
Turn-On Switching Loss
— 0.75 —
diode reverse recovery.
Eoff
Turn-Off Switching Loss
— 1.65 — mJ
Ets
Total Switching Loss
— 2.4 3.6
tsc
Short Circuit Withstand Time
10 — — µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 10Ω, VCPK < 500V
td(on)
Turn-On Delay Time
— 28 —
TJ = 150°C,
tr
td(off)
Rise Time
Turn-Off Delay Time
— 37 —
— 380 —
ns IC = 24A, VCC = 480V
VGE = 15V, R G = 10Ω
tf
Fall Time
— 460 —
Energy losses include "tail" and
Ets
Total Switching Loss
— 4.5 — mJ diode reverse recovery.
Cies
Input Capacitance
— 1500 —
VGE = 0V
Coes
Output Capacitance
— 190 — pF VCC = 30V
Cres
Reverse Transfer Capacitance
— 20 —
ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C
— 74 120
TJ = 125°C
IF = 15A
Irr
Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C
— 6.5 10
TJ = 125°C
VR = 200V
Qrr
Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C
— 220 600
TJ = 125°C
di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery
— 188 — A/µs TJ = 25°C
During tb
— 160 —
TJ = 125°C
Notes: Repetitive rating; V GE=20V, pulse width
VCC=80%(VCES), VGE=20V, L=10µH,
limited by maximum junction temperature.
RG= 10Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Pulse width 5.0µs,
single shot.
Package Outline 5 - IMS-2
Section D - page D-14
C-426
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