CR12BM Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Lista de partido
CR12BM Datasheet PDF : 6 Pages
| |||
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
RESISTIVE, θ
120
INDUCTIVE 360°
LOADS
100
80
60
θ = 30°
DC
270°
180°
40
60°
20
90°
120°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
200
TYPICAL EXAMPLE
180
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
140
TYPICAL
EXAMPLE
120
IGT (25°C)
# IGT = 10.1mA
100
80
#
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
IGT (25°C)
3
# 1 10.6mA
2
# 2 11.6mA
102
7
5
3
2
#2
101
7
#1
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
TURN-ON TIME VS. GATE CURRENT
10.0
9.0
Ta = 25°C
VD = 100V
8.0
RL = 12Ω
TYPICAL
7.0
EXAMPLE
6.0
IGT (25°C)
# IGT = 11.2mA
5.0
4.0
3.0
#
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
200
TYPICAL EXAMPLE
180
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
Share Link: 