CR8AM-8 Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Lista de partido
CR8AM-8 Datasheet PDF : 5 Pages
| |||
GATE CHARACTERISTICS
102
7
5
3
2
VFGM = 6V
101
7
5
3
2 VGT = 1V
PGM = 5W
PG(AV)
= 0.5W
100
7
IGT = 15mA
5
3
2
VGD = 0.2V
IFGM = 2A
10–1
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
00100000........59087634,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,JUN,,,,,,,,,,CDT,,,,,,,,,,IISOT,,,,,,,,,,NRIT,,,,,,,,,,BTEUYMT,,,,,,,,,,PPIIOCE,,,,,,,,,,NARLA,,,,,,,,,,TEUX,,,,,,,,,,RAME,,,,,,,,,,PL,,,,,,,,,,E
0.2
0.1
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
32
28
24
θ = 30° 60° 90° 120° 180°
20
16
12
8
θ
4
360°
0
RESISTIVE, INDUCTIVE LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–32 3 5 710–22 3 5 710–12 3 5 71002 3 5 7101
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
200
180
θ
160
360°
140
RESISTIVE,
120
INDUCTIVE
100
LOADS
80
60
40
θ = 30° 60° 90° 120° 180°
20
0
0 1 2 3 4 5 6 7 8 9 10
AVERAGE ON-STATE CURRENT (A)
Feb.1999
Share Link: 