CY2318ANZ Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY2318ANZ Datasheet PDF : 9 Pages
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CY2318ANZ
Maximum Ratings
Supply Voltage to Ground Potential ..................–0.5 to +7.0V
DC Input Voltage (except BUF_IN) .......... –0.5V to VDD + 0.5
DC Input Voltage (BUF_IN).............................. –0.5V to 7.0V
Storage Temperature .................................. –65°C to +150°C
Junction Temperature ............................................... +150°C
Static Discharge Voltage............................................ >2000V
(per MIL-STD-883, Method 3015)
Operating Conditions
Parameter
Description
Min.
Max.
Unit
VDD, VDDIIC
Supply Voltage
3.135
3.465
V
TA
Operating Temperature (Ambient Temperature)
0
70
°C
CL
Load Capacitance
20
30
pF
CIN
Input Capacitance
7
pF
tPU
Power-up time for all VDDs to reach minimum specified voltage
0.05
50
ms
(power ramps must be monotonic)
Electrical Characteristics Over the Operating Range
Parameter
VIL
Description
Input LOW Voltage[2]
Test Conditions
For all pins except serial
interface pins
VILiic
VIH
IIL
Input LOW Voltage
Input HIGH Voltage[2]
Input LOW Current
(BUF_IN input)
For serial pins only
VIN = 0V
IIL
Input LOW Current
VIN = 0V
(Except BUF_IN Pin)
IIH
Input HIGH Current
VIN = VDD
VOL
Output LOW Voltage[3]
IOL = 25 mA
VOH
Output HIGH Voltage[3]
IOH = –36 mA
IDD
Supply Current[3]
Unloaded outputs, 100 MHz
IDD
Supply Current
Loaded outputs, 100 MHz
IDD
Supply Current[3]
Unloaded outputs, 66.67 MHz
IDD
Supply Current
Loaded outputs, 66.67 MHz
IDDS
Supply Current
BUF_IN = VDD or VSS,
all other inputs at VDD
Notes:
2. BUF_IN input has a threshold voltage of VDD/2.
3. Parameter is guaranteed by design and characterization. Not 100% tested in production.
Min.
2.0
–10
–10
2.4
Max.
0.8
0.7
10
100
10
0.4
200
360
150
230
500
Unit
V
V
V
µA
µA
µA
V
V
mA
mA
mA
mA
µA
Document #: 38-07181 Rev. *B
Page 4 of 9
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