CY7C1041D Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY7C1041D Datasheet PDF : 9 Pages
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CY7C1041D
Document History Page
Document Title: CY7C1041D 4-Mbit (256K x 16) Static RAM
Document Number: 38-05472
Orig. of
REV. ECN NO. Issue Date Change Description of Change
**
201560 See ECN
SWI Advance Datasheet for C9 IPP
*A
233729 See ECN RKF 1.AC, DC parameters are modified as per EROS (Spec #01-2165)
2.Pb-free offering in the ‘ordering information’
*B
351117 See ECN
PCI Changed from Advance to Preliminary
Removed 17 and 20 ns Speed bin
Added footnote # 4
Redefined ICC values for Com’l and Ind’l temperature ranges
ICC (Com’l): Changed from 67 and 54 mA to 75 and 70 mA for 12 and 15 ns
speed bins respectively
ICC (Ind’l): Changed from 80, 67 and 54 mA to 90, 85 and 80 mA for 10, 12
and 15 ns speed bins respectively
Changed footnote # 10 on tR
Changed tSCE from 8 to 7 ns for 10 ns speed bin
Added Static Discharge Voltage and latch-up current spec
Added VIH(max) spec in footnote # 2
Changed reference voltage level for measurement of Hi-Z parameters from
±500 mV to ±200 mV
Added Write Cycle (WE Controlled, OE HIGH During Write) Timing Diagram
Changed part names from Z to ZS in the Ordering Information Table
Removed L-Version
Added 10 ns parts in the Ordering Information Table
Added Lead-Free Ordering Information
Shaded Ordering Information Table
*C
446328 See ECN NXR Converted Preliminary to Final
Removed -15 speed bin
Removed Commercial Operating Range product information
Added Automotive Operating Range product information
Changed Maximum Rating for supply voltage from 7V to 6V
Updated Thermal Resistance table
Changed tHZWE from 6 ns to 5 ns
Updated footnote #8 on High-Z parameter measurement
Updated the Ordering Information and replaced Package Name column with
Package Diagram in the Ordering Information table
Document #: 38-05472 Rev. *C
Page 9 of 9
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