IRFD120 Ver la hoja de datos (PDF) - Intersil
Número de pieza
componentes Descripción
Lista de partido
IRFD120 Datasheet PDF : 6 Pages
| |||
IRFD120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFD120
100
100
1.3
5.2
±20
1.0
0.008
36
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate Source Leakage
Drain Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 9)
100
VGS(TH) VGS = VDS, ID = 250µA
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
ID(ON) VDS > ID(ON) x rDS(ON) Max, VGS = 10V
1.3
IGSS VGS = ±20V
-
rDS(ON) ID = 0.6A, VGS = 10V (Figures 7, 8)
-
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.6A (Figure 11)
0.9
td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 1.3A,
-
tr
VGS = 10V, RG = 9.1Ω
RL = 38.5Ω for VDD = 50V
-
td(OFF) MOSFET Switching Times are Essentially
-
tf
Independent of Operating Temperature
-
Qg(TOT) VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS,
-
Ig(REF) = 1.5mA (Figure 13)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd
-
CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)
-
COSS
-
CRSS
-
LD
Measured From the Drain Modified MOSFET
-
Lead, 2mm (0.08in) from Symbol Showing the
Package to Center of Die Internal Device’s
LS
Measured From the Source Inductances
Lead, 2mm (0.08in) from
D
-
Header to Source Bonding
LD
Pad
G
LS
Thermal Resistance Junction to Ambient RθJA Free Air Operation
S
-
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250
µA
-
-
A
- ±500 nA
0.25 0.30
Ω
1.0
-
S
20
40
ns
35
70
ns
50 100
ns
35
70
ns
11
15
nC
6.0
-
nC
5.0
-
nC
450
-
pF
200
-
pF
50
-
pF
4.0
-
nH
6.0
-
nH
-
120 oC/W
4-276
Share Link: 