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CY7C1049D

4-Mbit (512 K × 8) Static RAM

Cypress Semiconductor 

CY7C1049D

Document History Page

Document Title: CY7C1049D 4-Mbit (512K x 8) Static RAM

Document Number: 38-05474

Revision ECN

Orig. of Submission

Change

Date

Description of Change

**

201560

SWI

See ECN Advance Datasheet for C9 IPP

*A

233729

RKF

See ECN 1.AC, DC parameters are modified as per EROS(Spec # 01-2165)

2.Pb-free offering in the ‘ordering information’

*B

351096

PCI

See ECN Changed from Advance to Preliminary

Removed 17, 20 ns Speed bin

Added footnote # 4

Redefined ICC values for Com’l and Ind’l temperature ranges

ICC (Com’l): Changed from 67 and 54 mA to 75 and 70 mA for 12 and 15 ns

speed bins respectively

ICC (Ind’l): Changed from 80, 67 and 54 mA to 90, 85 and 80 mA for 10, 12 and

15 ns speed bins respectively

Added VIH(max) spec in Note# 2

Modified Note# 10 on tR

Changed tSCE from 8 to 7 ns for 10 ns speed bin

Changed reference voltage level for measurement of Hi-Z parameters from ±500

mV to ±200 mV

Added Truth Table on page# 6

Removed L-Version

Added 10 ns parts in the Ordering Information Table

Added Lead-Free Product Information

Shaded Ordering Information Table

*C

446328

NXR

See ECN Converted from Preliminary to Final

Removed -12 and -15 speed bins

Removed Commercial Operating Range product information

Changed Maximum Rating for supply voltage from 7 V to 6 V

Updated Thermal Resistance table

Changed tHZWE from 6 ns to 5 ns

Updated footnote #7 on High-Z parameter measurement

Replaced Package Name column with Package Diagram in the Ordering Infor-

mation table

*D

3109184

AJU 12/13/2010 Added Ordering Code Definitions.

Updated Package Diagram.

*E

3235742 PRAS 04/20/2011 Updated template.

Added Acronyms and Units of measure.

Document #: 38-05474 Rev. *E

Page 11 of 12

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