CY7C1049D-10VXI Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY7C1049D-10VXI Datasheet PDF : 12 Pages
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CY7C1049D
Capacitance[3]
Parameter
CIN
COUT
Description
Input capacitance
I/O capacitance
Thermal Resistance[3]
Parameter
ΘJA
ΘJC
Description
Thermal resistance
(Junction to Ambient)[3]
Thermal resistance
(Junction to Case)[3]
AC Test Loads and Waveforms[4]
10-ns device
OUTPUT
Z = 50Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
50 Ω
1.5 V
(a)
HIGH-Z CHARACTERISTICS
R1 481Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(c)
R2
255Ω
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0 V
Max.
Unit
8
pF
8
pF
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
SOJ Package
57.91
36.73
Unit
°C/W
°C/W
30 pF*
3.0 V
GND
≤ 3 ns
ALL INPUT PULSES
90%
10%
(b)
90%
10%
≤ 3 ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
167Ω
1.73 V
Notes
2. Minimum voltage is –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05474 Rev. *E
Page 4 of 12
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