CY7C276(2006) Ver la hoja de datos (PDF) - Cypress Semiconductor
Número de pieza
componentes Descripción
Lista de partido
CY7C276 Datasheet PDF : 9 Pages
| |||
CY7C276
AC Test Loads and Waveforms
R1 500Ω
(658Ω MIL)
5V
R1 500Ω
(658Ω MIL)
5V
OUTPUT
OUTPUT
R2
50 pF
R2
333Ω
5 pF
333Ω
(403Ω
INCLUDING
JIG AND
(403Ω
MIL)
INCLUDING
JIG AND
MIL)
SCOPE
SCOPE
(a) Normal Load
(b) High Z Load
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
200Ω (250ΩMIL)
2.0V (1.9V Mil)
3.0V
GND
< 3 ns
ALL INPUT PULSES
90%
10%
90%
10%
< 3 ns
Switching Characteristics Over the Operating Range[2,3]
Parameter
Description
CY7C276-25
CY7C276-30
Min.
Max.
Min.
Max.
Unit
tAA
tCSOV
tCSOZ
tOEV
tOEZ
Address to Output Data Valid
CS Active to Output Valid
CS Inactive to High Z Output
OE Active to Output Valid
OE Inactive to High Z Output
25
30
ns
13
15
ns
13
15
ns
11
12
ns
11
12
ns
Erasure Characteristics
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV
intensity multiplied by exposure time) of 25 Wsec/cm2. For an
ultraviolet lamp with a 12 mW/cm2 power rating the exposure
time would be approximately 35 minutes. The CY7C276
needs to be within 1 inch of the lamp during erasure.
Permanent damage may result if the EPROM is exposed to
high-intensity UV light for an extended period of time. 7258
Wsec/cm2 is the recommended maximum dosage.
Wavelengths of light less than 4000 Angstroms begin to erase
the CY7C276 in the windowed package. For this reason, an
opaque label should be placed over the window if the EPROM
is exposed to sunlight or fluorescent lighting for extended
periods of time.
Document #: 38-04004 Rev. *C
Page 3 of 10
[+] Feedback
Share Link: 